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is tolerant of temperatures up to 40ºC. Excellent results were achieved at high tem- peratures, but this new process also runs very well at lower temperatures. Furthermore, the process can be used with either air or eductor nozzles, and the electrolyte is CVS analyzable or Hull cell controllable. Copper deposited using this system is bright, leveled, with enhanced microdistribution, and has excellent mechanical and physical properties that meet the IPC standards. NOTES 1. Coombs CF, Jr. Printed Circuit Handbook, Fifth Edition.New York: McGraw- Hill, 2001. 2. Dubin VM. Copper Plating Techniques for ULSI Metallization. Advanced Metallization and Interconnect Systems for ULSI Application in 1997: Materials Research Society Symposium Proceedings, (Jan. 1998) pp. 405–11. 3. Yung EK. Plating of copper into through-holes and vias. Journal of the Electrochemical Society 1989;136(1):206–15. 171